Analog decoding of Trellis Coded Modulation for multi-level flash memories

被引：1
|
作者：
Solda, S. [1 ]
Vogrig, D. [1 ]
Bevilacqua, A. [1 ]
Gerosa, A. [1 ]
Neviani, A. [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, Padua, Italy
来源：
PROCEEDINGS OF 2008 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, VOLS 1-10 | 2008年
关键词：
D O I：
10.1109/ISCAS.2008.4541525
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
Trellis Coded Modulation (TCM) is a potential candidate for error correction in multilevel flash memories. TCM typically requires probabilistic decoding algorithms (e.g. BCJR), that can be conveniently implemented in the analog domain. In this work, we study the feasibility and complexity of the analog approach, proposing transistor-level solutions for the building blocks of the decoder. In the case of a TCM designed for an effective storage density of 3 information bits/cell, an analog decoder for a 196-bit field features an estimated current draw of < 0.5 mA and area overhead of < 0.45 mm(2).
引用
收藏
页码：744 / 747
页数：4
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