Epitaxial growth of the diluted magnetic semiconductors CryGe1-y and CryMnxGe1-x-y

被引：26

作者：

Kioseoglou, G ^{[1
]}

Hanbicki, AT ^{[1
]}

Li, CH ^{[1
]}

Erwin, SC ^{[1
]}

Goswami, R ^{[1
]}

Jonker, BT ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 84卷 / 10期

关键词：

D O I：

10.1063/1.1668322

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the epitaxial growth of CryGe1-y and CryMnxGe1-x-y(001) thin films on GaAs(001), describe the structural and transport properties, and compare the measured magnetic properties with those predicted by theory. The samples are strongly p type, and hole densities increase with Cr concentration. The CryGe1-y system remains paramagnetic for the growth conditions and low Cr concentrations employed (yless than or equal to0.04), consistent with density functional theory predictions. Addition of Cr into the ferromagnetic semiconductor MnxGe1-x host systematically reduces the Curie temperature and total magnetization. (C) 2004 American Institute of Physics.

引用

页码：1725 / 1727

页数：3

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