Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes

被引：8

作者：

Crouse, D ^{[1
]}

Solomon, R ^{[1
]}

机构：

[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA

来源：

SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 10期

关键词：

photodetector; resonant cavity enhanced; silicon; silicon-on-insulator; avalanche photodiodes; integrated optoelectronics; surface plasmons;

D O I：

10.1016/j.sse.2005.07.003

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report an atypical device structure for a silicon-on -insulator (SOI) avalanche photodiode (APD) that uses vertically oriented surface plasmons to enable high device performance including high bandwidth and high responsivity. This device structure would allow for high bandwidth (> 10 GHz) read out integrated circuitry to be fabricated alongside the photodetector. A detailed numerical simulation of the device is performed that includes the use of the surface impedance boundary condition (SIBC) algorithm to calculate the optical resonance modes of the structure. The SIBC algorithm is integrated with a Poisson's equation solver and a Monte Carlo algorithm to model many aspects of the Sol APD device including bandwidth and responsivity as a function of applied bias. A brief discussion of surface plasmon modes and other optical modes in the APD and similar structures is also given. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：1697 / 1701

页数：5

共 50 条

[41] A Comparative Study of Silicon Drift Detectors With Photomultipliers, Avalanche Photodiodes and PIN Photodiodes in Gamma Spectrometry With LaBr3 Crystals
Moszynski, M.
Plettner, C.
Nassalski, A.
Szczesniak, I.
Swiderski, L.
Syntfeld-Kazuch, A.
Czarnacki, W.
Pausch, G.
Stein, J.
Niculae, A.
Soltau, H.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2009, 56 (03) : 1006 - 1011
[42] Surface plasmon enhanced photodetectors based on internal photoemission
Alavirad, Mohammad
Roy, Langis
Berini, Pierre
JOURNAL OF PHOTONICS FOR ENERGY, 2016, 6 (04):
[43] A Study of Crosstalk in a 256 x 256 Photon Counting Imager Based on Silicon Geiger-Mode Avalanche Photodiodes
Aull, Brian F.
Schuette, Daniel R.
Young, Douglas J.
Craig, David M.
Felton, Bradley J.
Warner, Keith
IEEE SENSORS JOURNAL, 2015, 15 (04) : 2123 - 2132
[44] Subbandgap Asymmetric Surface Plasmon Waveguide Schottky Detectors on Silicon
Akbari, Ali
Olivieri, Anthony
Berini, Pierre
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (03)
[45] Modeling the Effects of Interface Traps on the Static and Dynamic Characteristics of Ge/Si Avalanche Photodiodes
Gity, Farzan
Hayes, John M.
Corbett, Brian
Morrison, Alan P.
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2011, 47 (06) : 849 - 857
[46] Surface plasmon enhanced photoelectron emission
Hwang, T. Y.
Vorobyev, A. Y.
Guo, Chunlei
SYNTHESIS AND PHOTONICS OF NANOSCALE MATERIALS VII, 2010, 7586
[47] Silicon-germanium avalanche photodiodes with direct control of electric field in charge multiplication region
Zeng, Xiaoge
Huang, Zhihong
Wang, Binhao
Liang, Di
Fiorentino, Marco
Beausoleil, Raymond G.
OPTICA, 2019, 6 (06): : 772 - 777
[48] Label-free biosensors on silicon-on-insulator optical chips based on microring cavities and surface plasmon interferometry
De Vos, Katrien
De Backere, Peter
Baets, Roel
Bienstman, Peter
ICTON 2008: PROCEEDINGS OF 2008 10TH ANNIVERSARY INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS, VOL 2, 2008, : 88 - 91
[49] Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection
Pilotto, A.
Antonelli, M.
Arfelli, F.
Biasiol, G.
Cautero, G.
Cautero, M.
Colja, M.
Driussi, F.
Esseni, D.
Menk, R. H.
Nichetti, C.
Rosset, F.
Selmi, L.
Steinhartova, T.
Palestri, P.
FRONTIERS IN PHYSICS, 2022, 10
[50] Determination of impact ionization coefficients measured from 4H-silicon carbide avalanche photodiodes
Loh, W. S.
Johnson, C. M.
Ng, J. S.
Sandvik, P. M.
Arthur, S. D.
Soloviev, S. I.
David, J. P. R.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 339 - +

← 1 2 3 4 5 →