Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes

被引：8
|
作者：
Crouse, D [1 ]
Solomon, R [1 ]
机构：
[1] CUNY City Coll, Dept Elect Engn, New York, NY 10031 USA
来源：
SOLID-STATE ELECTRONICS | 2005年 / 49卷 / 10期
关键词：
photodetector; resonant cavity enhanced; silicon; silicon-on-insulator; avalanche photodiodes; integrated optoelectronics; surface plasmons;
D O I：
10.1016/j.sse.2005.07.003
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report an atypical device structure for a silicon-on -insulator (SOI) avalanche photodiode (APD) that uses vertically oriented surface plasmons to enable high device performance including high bandwidth and high responsivity. This device structure would allow for high bandwidth (> 10 GHz) read out integrated circuitry to be fabricated alongside the photodetector. A detailed numerical simulation of the device is performed that includes the use of the surface impedance boundary condition (SIBC) algorithm to calculate the optical resonance modes of the structure. The SIBC algorithm is integrated with a Poisson's equation solver and a Monte Carlo algorithm to model many aspects of the Sol APD device including bandwidth and responsivity as a function of applied bias. A brief discussion of surface plasmon modes and other optical modes in the APD and similar structures is also given. (c) 2005 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1697 / 1701
页数：5
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