Be-doped low-temperature grown GaAs for ultrafast optoelectronic devices and applications

被引：4

作者：

Coutaz, JL ^{[1
]}

Roux, JF ^{[1
]}

Gaarder, A ^{[1
]}

Marcinkevicius, S ^{[1
]}

Jasinski, J ^{[1
]}

Korona, K ^{[1
]}

Kaminska, M ^{[1
]}

Bertulis, K ^{[1
]}

Krotkus, A ^{[1
]}

机构：

[1] Univ Savoie, LAHC, F-73376 Le Bourget du Lac, France

来源：

SIMC-XI: 2000 INTERNATIONAL SEMICONDUCTING AND INSULATING MATERIALS CONFERENCE, PROCEEDINGS | 2000年

关键词：

D O I：

10.1109/SIM.2000.939204

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we review ultrafast optoelectronics devices made from low-temperature grown GaAs and related materials. The required material parameters for optimized devices are discussed. Our investigations on technology, structural quality, electrical characteristics and photoexcited carrier dynamics show that beryllium doped LT-GaAs meets all these requirements. In addition, doping with Be provides more flexibility in tuning material characteristics of low-temperature grown GaAs, which is a considerable advantage in device fabrication.

引用

页码：89 / 96

页数：8

共 50 条

[21] APPLICATIONS OF GAAS GROWN AT A LOW-TEMPERATURE BY MOLECULAR-BEAM EPITAXY
MISHRA, UK
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1993, 22 (01): : 72 - 77
[22] Ultrafast photoluminescence decay in GaAs grown by low-temperature molecular-beam-epitaxy
Krotkus, A
Marcinkevicius, S
Viselga, R
HOT CARRIERS IN SEMICONDUCTORS, 1996, : 113 - 115
[23] Low-temperature MBE-grown GaBiAs layers for terahertz optoelectronic applications
Pacebutas, Vaidas
Bertulis, Klemensas
Biciunas, Andrius
Krotkus, Arunas
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 6, NO 12, 2009, 6 (12): : 2649 - 2651
[24] ULTRAFAST SAMPLING FOR LOW-TEMPERATURE APPLICATIONS
KETCHEN, MB
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8B) : C429 - C429
[25] Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance
Globisch, B.
Dietz, R. J. B.
Nellen, S.
Goebel, T.
Schell, M.
AIP ADVANCES, 2016, 6 (12):
[26] Two-dimensional arsenic precipitation in superlattice structures of alternately undoped and heavily Be-doped GaAs grown by low-temperature molecular beam epitaxy
Su, ZA
Huang, JH
Hsieh, LZ
Lee, WI
APPLIED PHYSICS LETTERS, 1998, 72 (16) : 1984 - 1986
[27] Defect Characteristics of Be-doped GaSb Film Grown on GaAs
Guo, Xin
Chen, Yan
PROCEEDINGS OF THE 2018 3RD INTERNATIONAL CONFERENCE ON ELECTRICAL, AUTOMATION AND MECHANICAL ENGINEERING (EAME 2018), 2018, 127 : 121 - 123
[28] Origin of cooperative transition of antisite-Arsenic defects in Be-doped low-temperature-grown GaAs layers
Mohamed, Mohd Ambri
Pham Tien Lam
Otsuka, N.
JOURNAL OF CRYSTAL GROWTH, 2013, 378 : 329 - 332
[29] Heterojunction bipolar transistors with low temperature Be-doped base grown by CBE
Munns, GO
Chen, WL
Haddad, GI
JOURNAL OF CRYSTAL GROWTH, 1996, 164 (1-4) : 476 - 484
[30] On the properties of the Be-doped low temperature molecular beam epitaxy GaAs layers
Kowalski, G
Frymark, I
Krotkus, A
Bertulis, K
Kaminska, M
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2002, 91 : 449 - 452

← 1 2 3 4 5 →