High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator (vol 9, 025002, 2020)

被引：1

作者：

Kesorn, Ployrung ^{[1
]}

Bermundo, Juan Paolo ^{[1
]}

Nonaka, Toshiaki ^{[2
]}

Fujii, Mami N. ^{[1
]}

Ishikawa, Yasuaki ^{[1
]}

Uraoka, Yukiharu ^{[1
]}

机构：

[1] Nara Inst Sci & Technol, Ikoma, Nara 6300192, Japan

[2] Merck Performance Mat Ltd, Kakegawa, Shizuoka 4371412, Japan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 04期

关键词：

Dielectrics; -; High-k; Semiconductors; Spin coating;

D O I：

10.1149/2162-8777/ab89bd

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页数：2

共 41 条

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