High Performance Amorphous In-Ga-Zn-O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator (vol 9, 025002, 2020)

被引：1
作者：
Kesorn, Ployrung [1 ]
Bermundo, Juan Paolo [1 ]
Nonaka, Toshiaki [2 ]
Fujii, Mami N. [1 ]
Ishikawa, Yasuaki [1 ]
Uraoka, Yukiharu [1 ]
机构：
[1] Nara Inst Sci & Technol, Ikoma, Nara 6300192, Japan
[2] Merck Performance Mat Ltd, Kakegawa, Shizuoka 4371412, Japan
来源：
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2020年 / 9卷 / 04期
关键词：
Dielectrics; -; High-k; Semiconductors; Spin coating;
D O I：
10.1149/2162-8777/ab89bd
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页数：2
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