Localized biexcitons in CdxZn1-xS/ZnS quantum wells

被引：0

作者：

Yamada, Y ^{[1
]}

Kugimiya, H ^{[1
]}

Yoshida, Y ^{[1
]}

Yoshimura, K ^{[1
]}

Taguchi, T ^{[1
]}

机构：

[1] Yamaguchi Univ, Dept Elect & Elect Engn, Ube, Yamaguchi 7558611, Japan

来源：

PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II | 2001年 / 87卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Formation and localization of biexcitons in CdxZn1-xS/ZnS quantum wells have been studied by means of photoluminescence excitation spectroscopy. On the basis of the two-photon absorption of the biexcitons, it was found that the quantum-well biexcitons were localized by alloy disorder and there existed the distribution of the biexciton binding energy. The increase in the biexciton binding and the distribution of the binding energy result from the spatially-separated immobile localization of the biexcitons.

引用

页码：1571 / 1572

页数：2

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