The influence of growth temperatures on the characteristics of GaN nanowires

被引：14

作者：

Low, L. L. ^{[1
]}

Yam, F. K. ^{[1
]}

Beh, K. P. ^{[1
]}

Hassan, Z. ^{[1
]}

机构：

[1] Univ Sains Malaysia, Sch Phys, George Town 11800, Malaysia

来源：

APPLIED SURFACE SCIENCE | 2011年 / 258卷 / 01期

关键词：

GaN; Nanowires; Chemical vapour deposition; Vapour-liquid-solid; Growth temperature; PHOTOLUMINESCENCE BAND; CATALYTIC SYNTHESIS;

D O I：

10.1016/j.apsusc.2011.08.071

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper presents the investigation of the properties of GaN nanowires synthesized from Ni-catalyzed chemical vapour deposition method under various growth temperatures. The influence of the growth temperatures on the morphological, structural and optical characteristics of the synthesized GaN nanowires was investigated in this work. Field-emission scanning electron microscopy images revealed that the 950 degrees C was the optimal growth temperature for synthesizing uniform, straight and smooth morphology of GaN nanowires. X-ray diffraction results demonstrated that the synthesized low dimensional GaN structures have the hexagonal wurtzite structure. Ultraviolet and blue emissions were detected from photoluminescence measurements. In addition, phonon replicas with the energy separation of 90 meV have been observed at the lower energy of the blue emission region in photoluminescence spectra. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：542 / 546

页数：5

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