Structural, microstructural and ferroelectric properties of lead-free Ca-doped BaTiO3 thin films

被引：1

作者：

Sharma, Hakikat ^{[1
]}

Negi, N. S. ^{[1
]}

机构：

[1] HP Univ, Dept Phys, Shimla 171005, India

来源：

FERROELECTRICS | 2017年 / 518卷 / 01期

关键词：

Sol-gel; XRD; Raman; AFM; current density; ferroelectric; RAMAN;

D O I：

10.1080/00150193.2017.1360616

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The lead-free BaTiO3 (BT) and Ba1-xCaxTiO3 (0.10 x 0.30) ferroelectric thin films were fabricated by sol-gel method using spin coating unit. The prepared thin films were characterized by X- ray diffractometer and Raman spectrometer for structural analysis. The XRD patterns confirmed the perovskite structure of thin films. Microstructural study has been carried out by atomic force microscope (AFM). The leakage current density increased on Ca substitution. Room temperature electric field dependent polarization has been studied by radiant multiferroic tester. Thickness of the thin films has been measured by cross-sectional FE-SEM, which is not included in the present article.

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页码：118 / 123

页数：6

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