Energy-storage performance and electrocaloric effect in (100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O3 antiferroelectric thick films

被引：88

作者：

Hao, Xihong ^{[1
,2
,3
]}

Yue, Zhenxing ^{[1
,2
]}

Xu, Jinbao ^{[4
]}

An, Shengli ^{[3
]}

Nan, Ce-Wen ^{[1
,2
]}

机构：

[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Beijing 100084, Peoples R China

[2] Tsinghua Univ, Dept Mat Sci & Engn, Beijing 100084, Peoples R China

[3] Inner Mongolia Univ Sci & Technol, Sch Met & Mat, Baotou 014010, Peoples R China

[4] Chinese Acad Sci, Xinjiang Key Lab Elect Informat Mat & Devices, Xinjiang Tech Inst Phys & Chem, Urumqi 830011, Peoples R China

来源：

JOURNAL OF APPLIED PHYSICS | 2011年 / 110卷 / 06期

基金：

中国国家自然科学基金;

关键词：

DIELECTRIC-PROPERTIES; CAPACITORS; CERAMICS; FABRICATION;

D O I：

10.1063/1.3641983

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

(100)-oriented Pb0.97La0.02(Zr0.95Ti0.05)O-3 (PLZT) antiferroelectric films with a thickness of about 1.7 mu m were deposited on Pt-buffered silicon substrates via a sol-gel process. The room-temperature capacitance density of the films was above 195 nF/cm(2) over the frequency range from 1 kHz to 1 MHz. The recoverable energy density was enlarged with increasing measurement field, and a maximum value of 12.4 J/cm(3) at 1120 kV/cm was obtained at room temperature. From the temperature-dependent electric-field-induced polarization hysteresis loops, a maximum reversible adiabatic temperature change, Delta T = 8.5 degrees C, was obtained near the phase-transition temperature. (C) 2011 American Institute of Physics. [doi:10.1063/1.3641983]

引用

页数：5

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