A Josephson field effect transistor using an InAs-inserted-channel In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure

被引：0

作者：

Akazaki, T ^{[1
]}

Takayanagi, H ^{[1
]}

Nitta, J ^{[1
]}

Enoki, T ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, LSI LABS, ATSUGI, KANAGAWA 24301, JAPAN

来源：

APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 03期

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D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A Josephson field effect transistor (JOFET) was coupled with a two-dimensional electron gas in a strained InAs quantum well inserted into an In0.52Al0.48As/In0.53Ga0.47As inverted modulation-doped structure. The characteristics df this JOFET are much improved over previous devices by using a high electron mobility transistor (HEMT)-type gate instead of the usual metal-insulator-semiconductor (MIS)-type gate. The superconducting critical current as well as the junction normal resistance are completely controlled via a gate voltage of about -1 V; this provides voltage gain over 1 for a JOFET. (C) 1996 American Institute of Physics.

引用

页码：418 / 420

页数：3

共 22 条

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