SOI bonded wafer process for high precision MEMS inertial sensors

被引：17

作者：

Sawyer, WD ^{[1
]}

Prince, MS ^{[1
]}

Brown, GJ ^{[1
]}

机构：

[1] Charles Stark Draper Lab Inc, Cambridge, MA 02139 USA

来源：

JOURNAL OF MICROMECHANICS AND MICROENGINEERING | 2005年 / 15卷 / 08期

关键词：

Sensors;

D O I：

10.1088/0960-1317/15/8/030

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A process for fabricating MEMS. devices using a silicon on insulator (SOI) wafer bonded to a substrate glass or silicon wafer is presented. In this process, the device layer of the SOI wafer is bonded to the substrate wafer, and the handle and SiO2 layers of the SOI wafer are subsequently removed. This method of manufacturing MEMS devices using SOI wafers offers important advantages over alternative SOI wafer processes, and is being implemented to manufacture high accuracy MEMS inertial devices.

引用

页码：1588 / 1593

页数：6

共 19 条

[1]

[Anonymous], 1990, THESIS U CALIFORNIA

[2]

Borenstein J. T., 2000, MAT RES SOC S, V657

[3]

BROSNIHAN TJ, 1997, 9 INT C SOL STAT SEN, P637

[4]

CHAE J, 2000, P 2002 MEMS C, P623

[5]

CHEN T, 2003, VLSI SEM MIT US OCT

[6]

DIEM B, 1993, 7 INT C SOL STAT SEN, P233

[7] Experimental study of thermoelastic damping in MEMS gyros [J].

Duwel, A ;

Gorman, J ;

Weinstein, M ;

Borenstein, J ;

Ward, P .

SENSORS AND ACTUATORS A-PHYSICAL, 2003, 103 (1-2) :70-75

[8] A bulk silicon dissolved wafer process for microelectromechanical devices [J].

Gianchandani, Yogesh B. ;

Najafi, Khalil .

Journal of Microelectromechanical Systems, 1992, 1 (02) :77-85

[9]

GIBBONS KA, 1998, AIAA GUID NAV CONTR, P1296

[10]

GORMELY C, 1999, SEMICONDUCTOR WAFER, P350

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