Improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a surface plasma treatment approach

被引：4

作者：

Chen, Tai-You ^{[1
]}

Chen, Huey-Ing ^{[2
]}

Huang, Chien-Chang ^{[1
]}

Hsu, Chi-Shiang ^{[1
]}

Chiu, Po-Shun ^{[1
]}

Chou, Po-Cheng ^{[1
]}

Liu, Wen-Chau ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Natl Cheng Kung Univ, Dept Chem Engn, Tainan 70101, Taiwan

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2011年 / 159卷 / 01期

关键词：

GaN; Pd; Hydrogen; Sensor; Surface treatment; GAS-SENSOR; TEMPERATURE; MECHANISM; OXIDE;

D O I：

10.1016/j.snb.2011.06.066

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The improved hydrogen-sensing performance of a Pd/GaN Schottky diode with a simple surface treatment is demonstrated. The studied device with an inductively coupled-plasma (ICP)-treatment shows both the good sensitivity and fast response. A high hydrogen detection sensing response of 2.05 x 10(5), under exposing to a 10,000 ppm H(2)/air gas at room temperature, is obtained. It is found that, due to the increased surface roughness, more hydrogen atoms are adsorbed on the active layer which leads to the substantial increase of current change. In addition, the studied device shows a stable and widespread reverse voltage operating regime (-0.3 to -3 V) and a fast response about of 2.9 s. Therefore, this simple surface treatment approach gives the promise for hydrogen sensing applications. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：159 / 162

页数：4

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