Scaleable Single-Photon Avalanche Diode Structures in Nanometer CMOS Technology

被引：130

作者：

Richardson, Justin A. ^{[1
]}

Webster, Eric A. G. ^{[2
]}

Grant, Lindsay A. ^{[3
]}

Henderson, Robert K. ^{[2
]}

机构：

[1] Dialog Semicond UK Ltd, Multrees Walk, Edinburgh, Midlothian, Scotland

[2] Univ Edinburgh, Sch Elect & Elect Engn, Inst Integrated Micro & Nano Syst, Edinburgh EH9 3JL, Midlothian, Scotland

[3] ST Microelect Imaging Div, Edinburgh EH12 7BF, Midlothian, Scotland

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2011年 / 58卷 / 07期

关键词：

Biomedical imaging; complementary metal-oxide-semiconductor (CMOS) integrated circuits; image sensors; photodetectors; photodiodes; p-n junctions; DETECTOR;

D O I：

10.1109/TED.2011.2141138

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Single-photon avalanche photodiodes (SPADs) operating in Geiger mode offer exceptional time resolution and optical sensitivity. Implementation in modern nanometer-scale complementary metal-oxide-semiconductor (CMOS) technologies to create dense high-resolution arrays requires a device structure that is scaleable down to a few micrometers. A family of three SPAD structures with sub-100-Hz mean dark count rate (DCR) is proposed in 130-nm CMOS image sensor technology. Based on a novel retrograde buried n-well guard ring, these detectors are shown to readily scale from 32 to 2 mu m with improving DCR, jitter, and yield. One of these detectors is compatible with standard triple-well digital CMOS, and the others bring the first low-DCR realizations at the 130-nm node of shallow-trench-isolation-bounded and enhancement SPADs.

引用

页码：2028 / 2035

页数：8

共 31 条

[1]

Carrara Lucio, 2009, 2009 IEEE International Solid-State Circuits Conference (ISSCC 2009), P40, DOI 10.1109/ISSCC.2009.4977297

[2] A flexible compact readout circuit for SPAD arrays [J].

Chitnis, Danial ;

Collins, Steve .

DETECTORS AND IMAGING DEVICES: INFRARED, FOCAL PLANE, SINGLE PHOTON, 2010, 7780

[3]

Cohen M, 2006, INT EL DEVICES MEET, P812

[4] Microconcentrators to recover fill-factor in image photodetectors with pixel on-board processing circuits [J].

Donati, Silvano ;

Martini, Giuseppe ;

Norgia, Michele .

OPTICS EXPRESS, 2007, 15 (26) :18066-18075

[5] Fully integrated single photon avalanche diode detector in standard CMOS 0.18-μm technology [J].

Faramarzpour, Naser ;

Deen, M. Jarnal ;

Shirani, Shahram ;

Fang, Qiyin .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) :760-767

[6] STI-bounded single-photon avalanche diode in a deep-submicrometer CMOS technology [J].

Finkelstein, Hod ;

Hsu, Mark J. ;

Esener, Sadik C. .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (11) :887-889

[7] The Digital Silicon Photomultiplier - Principle of Operation and Intrinsic Detector Performance [J].

Frach, Thomas ;

Prescher, Gordian ;

Degenhardt, Carsten ;

de Gruyter, Rik ;

Schmitz, Anja ;

Ballizany, Rob .

2009 IEEE NUCLEAR SCIENCE SYMPOSIUM CONFERENCE RECORD, VOLS 1-5, 2009, :1959-1965

[8] A low-noise single-photon detector implemented in a 130 nm CMOS imaging process [J].

Gersbach, Marek ;

Richardson, Justin ;

Mazaleyrat, Eric ;

Hardillier, Stephane ;

Niclass, Cristiano ;

Henderson, Robert ;

Grant, Lindsay ;

Charbon, Edoardo .

SOLID-STATE ELECTRONICS, 2009, 53 (07) :803-808

[9] NEW SILICON EPITAXIAL AVALANCHE-DIODE FOR SINGLE-PHOTON TIMING AT ROOM-TEMPERATURE [J].

GHIONI, M ;

COVA, S ;

LACAITA, A ;

RIPAMONTI, G .

ELECTRONICS LETTERS, 1988, 24 (24) :1476-1477

[10] Progress in silicon single-photon avalanche diodes [J].

Ghioni, Massimo ;

Gulinatti, Angelo ;

Rech, Ivan ;

Zappa, Franco ;

Cova, Sergio .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2007, 13 (04) :852-862

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