Preparation of microcrystalline single junction and amorphous-microcrystalline tandem silicon solar cells entirely by hot-wire CVD

被引：16

作者：

Kupich, M ^{[1
]}

Grunsky, D ^{[1
]}

Kumar, P ^{[1
]}

Schröder, B ^{[1
]}

机构：

[1] Univ Kaiserslautern, Dept Phys, D-67653 Kaiserslautern, Germany

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2004年 / 81卷 / 01期

关键词：

tandem solar cells; amorphous silicon; microcrystalline silicon; hot-wire CVD;

D O I：

10.1016/j.solmat.2003.10.002

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The hot-wire chemical vapour deposition (HWCVD) has been used to prepare highly conducting p- and n-doped microcrystalline silicon thin layers as well as highly photoconducting, low defect density intrinsic microcrystalline silicon films. These films were incorporated in all-HWCVD, all-microcrystalline nip and pin solar cells, achieving conversion efficiencies of eta = 5.4% and 4.5%, respectively. At present, only the nip-structures are found to be stable against light-induced degradation. Furthermore, microcrystalline nip and pin structures have been successfully incorporated as bottom cells in all-hot-wire amorphous-microcrystalline nipnip- and pinpin-tandem solar cells for the first time. So far, the highest conversion efficiencies of the "micromorph" tandem structures are eta = 5.7% for pinpin-solar cells and 7.0% for nipnip solar cells. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：141 / 146

页数：6

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