Epitaxial growth of silver on Br-passivated Si(111) substrates under high vacuum

被引：26

作者：

Sundaravel, B ^{[1
]}

Das, AK ^{[1
]}

Ghose, SK ^{[1
]}

Sekar, K ^{[1
]}

Dev, BN ^{[1
]}

机构：

[1] Inst Phys, Bhubaneswar 751005, Orissa, India

来源：

APPLIED SURFACE SCIENCE | 1999年 / 137卷 / 1-4期

关键词：

epitaxy; mosaic spread; strain; grain coarsening;

D O I：

10.1016/S0169-4332(98)00484-X

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ag thin films (similar to 125 nm) were deposited on Br-passivated vicinal (4 degrees miscut) Si(lll) surfaces at room temperature under high vacuum conditions. The films have been characterized by Rutherford backscattering spectrometry (RBS) and channeling, X-ray diffraction and transmission electron microscopy and diffraction measurements. The [111] axis of the Ag epilayer is tilted from the substrate [111] orientation by 0.4 degrees towards the substrate surface normal. The films are grainy with a mosaic spread of 0.74 degrees. The crystal quality of the Ag layer improves and the mosaic spread decreases to 0.37 degrees upon annealing in high vacuum at higher temperatures (400 and 500 degrees C) as observed from RBS/channeling and high resolution X-ray diffraction measurements. The tilt angle of the Ag[111] axis and the layer strain also decrease to some extent upon annealing at 500 degrees C. (C) 1999 Elsevier Science B.V. All rights reserved.

引用

页码：11 / 19

页数：9

共 29 条

[1] CRYSTALLOGRAPHIC TILTING OF HETEROEPITAXIAL LAYERS [J].