Antiferromagnetic order in MnBi2Te4 films grown on Si(111) by molecular beam epitaxy

被引：12

作者：

Liu, N. ^{[1
,2
]}

Schreyeck, S. ^{[1
,2
]}

Fijalkowski, K. M. ^{[1
,2
]}

Kamp, M. ^{[3
,4
]}

Brunner, K. ^{[1
,2
]}

Gould, C. ^{[1
,2
]}

Molenkamp, L. W. ^{[1
,2
]}

机构：

[1] Univ Wurzburg, Fac Phys & Astron EP3, D-97074 Wurzburg, Germany

[2] Inst Topol Insulators, D-97074 Wurzburg, Germany

[3] Univ Wurzburg, Phys Inst, D-97074 Wurzburg, Germany

[4] Univ Wurzburg, Fak Phys & Astron, Rontgen Ctr Complex Mat Syst RCCM, D-97074 Wurzburg, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2022年 / 591卷

关键词：

Characterization; Molecular beam epitaxy; Bismuth compounds; Magnetic materials; TOPOLOGICAL INSULATOR; BEHAVIOR;

D O I：

10.1016/j.jcrysgro.2022.126677

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to observe pure antiferromagnetic order by magnetometry. We report on a detailed study of MnBi2Te4 films grown on Si(1 1 1) by MBE with elemental sources. Films of about 100 nm thickness are analyzed in stoichiometric, structural, magnetic and magnetotransport properties with high accuracy. High-quality MnBi2Te4 films with nearly perfect septuple-layer structure are realized and structural defects typical for epitaxial van-der-Waals layers are analyzed. The films reveal antiferromagnetic order with a Neel temperature of 19 K, a spin-flop transition at a magnetic field of 2.5 T and a resistivity of 1.6 m Omega.cm. These values are comparable to that of bulk MnBi2Te4 crystals. Our results provide an important basis for realizing and identifying single-phase MnBi2Te4 films with antiferromagnetic order grown by MBE.

引用

页数：5

共 34 条

[1]

Bac SK, 2022, Arxiv, DOI arXiv:2103.15801

[2]

Chang CZ, 2015, NAT MATER, V14, P473, DOI [10.1038/nmat4204, 10.1038/NMAT4204]

[3] Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator [J].

Chang, Cui-Zu ;

Zhang, Jinsong ;

Feng, Xiao ;

Shen, Jie ;

Zhang, Zuocheng ;

Guo, Minghua ;

Li, Kang ;

Ou, Yunbo ;

Wei, Pang ;

Wang, Li-Li ;

Ji, Zhong-Qing ;

Feng, Yang ;

Ji, Shuaihua ;

Chen, Xi ;

Jia, Jinfeng ;

Dai, Xi ;

Fang, Zhong ;

Zhang, Shou-Cheng ;

He, Ke ;

Wang, Yayu ;

Lu, Li ;

Ma, Xu-Cun ;

Xue, Qi-Kun .

SCIENCE, 2013, 340 (6129) :167-170

[4] Quantum anomalous Hall effect in intrinsic magnetic topological insulator MnBi2Te4 [J].

Deng, Yujun ;

Yu, Yijun ;

Shi, Meng Zhu ;

Guo, Zhongxun ;

Xu, Zihan ;

Wang, Jing ;

Chen, Xian Hui ;

Zhang, Yuanbo .

SCIENCE, 2020, 367 (6480) :895-+

[5] Spinodal nanodecomposition in semiconductors doped with transition metals [J].

Dietl, T. ;

Sato, K. ;

Fukushima, T. ;

Bonanni, A. ;

Jamet, M. ;

Barski, A. ;

Kuroda, S. ;

Tanaka, M. ;

Pham Nam Hai ;

Katayama-Yoshida, H. .

REVIEWS OF MODERN PHYSICS, 2015, 87 (04) :1311-1377

[6] Quantum anomalous Hall edge channels survive up to the Curie temperature [J].

Fijalkowski, Kajetan M. ;

Liu, Nan ;

Mandal, Pankaj ;

Schreyeck, Steffen ;

Brunner, Karl ;

Gould, Charles ;

Molenkamp, Laurens W. .

NATURE COMMUNICATIONS, 2021, 12 (01)

[7] Part-per-million quantization and current-induced breakdown of the quantum anomalous Hall effect [J].

Fox, E. J. ;

Rosen, I. T. ;

Yang, Yanfei ;

Jones, George R. ;

Elmquist, Randolph E. ;

Kou, Xufeng ;

Pan, Lei ;

Wang, Kang L. ;

Goldhaber-Gordon, D. .

PHYSICAL REVIEW B, 2018, 98 (07)

[8] Precision measurement of the quantized anomalous Hall resistance at zero magnetic field [J].

Goetz, Martin ;

Fijalkowski, Kajetan M. ;

Pesel, Eckart ;

Hartl, Matthias ;

Schreyeck, Steffen ;

Winnerlein, Martin ;

Grauer, Stefan ;

Scherer, Hansjoerg ;

Brunner, Karl ;

Gould, Charles ;

Ahlers, Franz J. ;

Molenkamp, Laurens W. .

APPLIED PHYSICS LETTERS, 2018, 112 (07)

[9] Experimental Realization of an Intrinsic Magnetic Topological Insulator [J].

Gong, Yan ;

Guo, Jingwen ;

Li, Jiaheng ;

Zhu, Kejing ;

Liao, Menghan ;

Liu, Xiaozhi ;

Zhang, Qinghua ;

Gu, Lin ;

Tang, Lin ;

Feng, Xiao ;

Zhang, Ding ;

Li, Wei ;

Song, Canli ;

Wang, Lili ;

Yu, Pu ;

Chen, Xi ;

Wang, Yayu ;

Yao, Hong ;

Duan, Wenhui ;

Xu, Yong ;

Zhang, Shou-Cheng ;

Ma, Xucun ;

Xue, Qi-Kun ;

He, Ke .

CHINESE PHYSICS LETTERS, 2019, 36 (07)

[10] Scaling of the Quantum Anomalous Hall Effect as an Indicator of Axion Electrodynamics [J].

Grauer, S. ;

Fijalkowski, K. M. ;

Schreyeck, S. ;

Winnerlein, M. ;

Brunner, K. ;

Thomale, R. ;

Gould, C. ;

Molenkamp, L. W. .

PHYSICAL REVIEW LETTERS, 2017, 118 (24)

← 1 2 3 4 →