Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode

被引：34
|
作者：
Harako, S. [1 ]
Yokoyama, S. [1 ]
Ide, K. [1 ]
Zhao, X. [1 ]
Komoro, S. [2 ]
机构：
[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 162, Japan
[2] Toyo Univ, Fac Engn, Kawagoe, Saitama 3508585, Japan
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 01期
关键词：
D O I：
10.1002/pssa.200776709
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Er-doped ZnO/Si hetero-junctions have been formed by laser ablating an Er-contained ZnO target onto p-Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 mu m emissions at room temperature. A light emission at 1180 nm was also observed. These emissions arose from intra-4f transitions in Er3+ ions that were excited by impact excitation process. A threshold voltage of similar to 10 V was achieved for emitting multi colors. Our results show a strong possibility of realizing the Si-based light emitting devices by Er doing. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
引用
收藏
页码：19 / 22
页数：4
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