Visible and infrared electroluminescence from an Er-doped n-ZnO/p-Si light emitting diode

被引：34

作者：

Harako, S. ^{[1
]}

Yokoyama, S. ^{[1
]}

Ide, K. ^{[1
]}

Zhao, X. ^{[1
]}

Komoro, S. ^{[2
]}

机构：

[1] Tokyo Univ Sci, Dept Phys, Shinjuku Ku, Tokyo 162, Japan

[2] Toyo Univ, Fac Engn, Kawagoe, Saitama 3508585, Japan

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 2008年 / 205卷 / 01期

关键词：

D O I：

10.1002/pssa.200776709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Er-doped ZnO/Si hetero-junctions have been formed by laser ablating an Er-contained ZnO target onto p-Si(100) substrates. Light emitting diodes fabricated by using these samples exhibited bright green (536 nm and 556 nm), red (665 nm) and 1.54 mu m emissions at room temperature. A light emission at 1180 nm was also observed. These emissions arose from intra-4f transitions in Er3+ ions that were excited by impact excitation process. A threshold voltage of similar to 10 V was achieved for emitting multi colors. Our results show a strong possibility of realizing the Si-based light emitting devices by Er doing. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：19 / 22

页数：4

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