Surface preparation of ZnO single-crystal substrate for the epitaxial growth of ZnO thin films

被引：6

作者：

Nakamura, T. ^{[1
]}

Masuko, K. ^{[1
]}

Ashida, A. ^{[1
]}

Yoshimura, T. ^{[1
]}

Fujimura, N. ^{[1
]}

机构：

[1] Osaka Prefecture Univ, Grad Sch Engn, Dept Phys & Elect, Naka Ku, Osaka 5998531, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期

关键词：

Atomic force microscopy; Etching; Substrates; Oxides; Zinc compounds; Semiconducting II-VI materials; CRYSTALLOGRAPHIC POLARITY; EMISSION;

D O I：

10.1016/j.jcrysgro.2010.10.044

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The surface treatment method using chemical etching for Zn-polar zinc oxide (ZnO) single-crystal substrates without annealing is proposed. The wet-chemical etching of Zn-polar ZnO had a serious issue that led to the formation of a large number of etch pits at the surface together with the formation of step structure. After various experiments, the pH control of the solution during wet-etching at first stage of the etching is found to be very important to obtain the straight step-edges without formation of etch-pit. Atomically flat substrates without etch pits were able to be obtained by controlling the pH in BHF solution. Eventually, homoepitaxial ZnO thin films with atomically flat surface were formed as well. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：516 / 518

页数：3

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