Photoluminescence in fast-response Bi2Al4O9 and Bi2Ga4O9 oxide scintillators

The bulk bismuth aluminate Bi2Al4O9 and gallate Bi2Ga4O9 scintillative crystals have been grown from a high temperature self-flux solution adopting a top seeded technique. The lattice parameters and density of the compounds have been appropriately determined based on single crystals and powder pattern technique as well. The reflectivity, absorption and photoluminescence spectra of as grown crystals are reported. Green-yellow and red emission bands for both compounds have been readily recorded at 300 K, while the red luminescence can be sufficiently effective excited by high energy electron beam. The difference of excitation band position for crystals studied is evidently presented. Two decay time components equal 25 and 155 ns for Bi2Al4O9 crystal have been detected at room temperature.