Ultrawideband Signal Transition Using Quasi-Coaxial Through-Silicon-Via (TSV) for mm-Wave IC Packaging

被引：16

作者：

Yook, Jong-Min ^{[1
,2
]}

Kim, Young-Gon ^{[3
]}

Kim, Wansik ^{[3
]}

Kim, Sosu ^{[4
]}

Kim, Jun Chul ^{[1
,2
]}

机构：

[1] Korea Elect Technol Inst, Dept ICT Device, Seongnam Si 463816, South Korea

[2] Korea Elect Technol Inst, Packaging Res Ctr, Seongnam Si 463816, South Korea

[3] LIG Nex1 Corp, Yongin, Kyeoggi Do, South Korea

[4] Agcy Def Dev, Daejeon, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2020年 / 30卷 / 02期

关键词：

Millimeter-wave (mm-wave) integrated circuit (IC) packaging; Quasi-coaxial through-silicon-via (TSV); Si-interposer; TSV; W-band integration; CMOS; SI;

D O I：

10.1109/LMWC.2019.2960884

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a quasi-coaxial through-silicon-via (TSV) is presented for millimeter-wave integrated circuit (IC) packaging. The quasi-coaxial-via (Q-COV) structure in which one side ground metal is removed can minimize the interconnect length when it is mounted, in comparison to the coaxial-via (COV) structure. Simulation analysis shows that the Q-COV has similar electrical characteristics as the COV up to 100 GHz even though there is no GND on one side. To make the small signal core of the Q-COV, the silicon-core metallization process was used and a Si-interposer with Q-COVs of 50-mu core diameter was fabricated and mounted on the glass board for signal transition analysis. The measured transition loss in the mounted Si-interposer was very small, only about 0.6 dB at 100 GHz, and the return loss was more than 20 dB for the entire measured frequency band (0-110 GHz).

引用

页码：167 / 169

页数：3