Physical modeling of fast p-i-n diodes with carrier lifetime zoning, part I: Device model

被引：47

作者：

Bryant, Angus T. ^{[1
]}

Lu, Liqing ^{[2
]}

Santi, Enrico ^{[2
]}

Palmer, Patrick R. ^{[3
]}

Hudgins, Jerry L. ^{[4
]}

机构：

[1] Univ Warwick, Sch Engn, Coventry CV4 7AL, W Midlands, England

[2] Univ S Carolina, Dept Elect Engn, Columbia, SC 29208 USA

[3] Univ Cambridge, Ctr Adv Photon & Elect, Dept Engn, Cambridge CB3 0FA, England

[4] Univ Nebraska, Dept Elect Engn, Lincoln, NE 68588 USA

来源：

IEEE TRANSACTIONS ON POWER ELECTRONICS | 2008年 / 23卷 / 01期

关键词：

lifetime control; physics-based model; p-i-n diode model; power semiconductor modeling; variable lifetime;

D O I：

10.1109/TPEL.2007.911823

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents the development and implementation of a physics-based diode model which can simulate aspects of high-voltage diodes such as snappy recovery during punch-through and the modified carrier density profile due to local lifetime control. It uses a Fourier series solution for the ambipolar diffusion equation in the lightly doped base region. The model is compared with finite-element device simulations. A parameter extraction procedure for the diode with lifetime control is proposed in Part II.

引用

页码：189 / 197

页数：9

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