Preparation and characterization of sol-gel-derived n-ZnO thin film for Schottky diode application

被引：31

作者：

Yilmaz, M. ^{[1
]}

Caldiran, Z. ^{[2
]}

Deniz, A. R. ^{[3
]}

Aydogan, S. ^{[2
]}

Gunturkun, R. ^{[4
]}

Turut, A. ^{[5
]}

机构：

[1] Ataturk Univ, Grad Sch Nat & Appl Sci, Dept Nanosci & Nanoengn, Adv Mat Res Lab, TR-25240 Erzurum, Turkey

[2] Ataturk Univ, Dept Phys, TR-25240 Erzurum, Turkey

[3] Univ Hakkari, Dept Elect & Elect Engn, TR-30000 Hakkari, Turkey

[4] Dumlupinar Univ, Dept Elect & Elect Engn, TR-43500 Simav, Kutahya, Turkey

[5] Istanbul Univ, Dept Engn Phys, TR-34100 Istanbul, Turkey

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2015年 / 119卷 / 02期

关键词：

OPTICAL-PROPERTIES; ELECTRICAL CHARACTERIZATION; TEMPERATURE; CONTACT; AU;

D O I：

10.1007/s00339-015-8987-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

n-ZnO film has been formed on p-Si substrate using sol-gel spin-coating technique. For structural, optical and morphological characterization, the XRD pattern, SEM images and EDX spectra of the n-ZnO film have been obtained. The optical band gap of n-ZnO has been calculated as 3.29 eV. A Schottky diode application of the film has been performed by evaporation of Au on n-ZnO film. It has been seen that the device has exhibited good rectifying behavior. The current-voltage (I-V) and capacitance-voltage (C-V) measurement of the device has been taken as a function of the frequency, at room temperature. Using I-V curve, the ideality factor and barrier height (I broken vertical bar (b)) of n-ZnO have been calculated as 1.93 and 0.80 eV, respectively. (I broken vertical bar (b)) (C-V) has been found 0.86 eV, at 500 kHz frequency.

引用

页码：547 / 552

页数：6

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