A Consistent Picture of Cycling Dispersion of Resistive States in HfOx Resistive Random Access Memory

被引：0
作者：
Puglisi, Francesco Maria [1 ]
Pavan, Paolo [1 ]
机构：
[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, Via P Vivarelli 10-1, I-41125 Modena, MO, Italy
来源：
2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) | 2016年
关键词：
RRAM; Resistive Memory; Switching; Dispersion; Variability; COMPACT MODEL; RRAM;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we present the results of a systematic study of resistive states cycling dispersion in HfOx Resistive Random Access Memory (RRAM). A wide set of experimental data is collected on several RRAM devices in different operating conditions. A compact model is exploited 10 link the device electrical response to its physical characteristics, delivering a clear physical picture of cycling dispersion and of its sensitivity to operating conditions. The implications of operating voltage, current compliance, and temperature on the device reliability are clarified. Particularly, the dispersion of both R-HRS and R-LRS is much worsened at low current compliance, which reduces the worst-case read window establishing a trade-off between device reliability and power consumption.
引用
收藏
页码：76 / 79
页数：4
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