A Consistent Picture of Cycling Dispersion of Resistive States in HfOx Resistive Random Access Memory

被引：0

作者：

Puglisi, Francesco Maria ^{[1
]}

Pavan, Paolo ^{[1
]}

机构：

[1] Univ Modena & Reggio Emilia, Dipartimento Ingn Enzo Ferrari, Via P Vivarelli 10-1, I-41125 Modena, MO, Italy

来源：

2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016) | 2016年

关键词：

RRAM; Resistive Memory; Switching; Dispersion; Variability; COMPACT MODEL; RRAM;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present the results of a systematic study of resistive states cycling dispersion in HfOx Resistive Random Access Memory (RRAM). A wide set of experimental data is collected on several RRAM devices in different operating conditions. A compact model is exploited 10 link the device electrical response to its physical characteristics, delivering a clear physical picture of cycling dispersion and of its sensitivity to operating conditions. The implications of operating voltage, current compliance, and temperature on the device reliability are clarified. Particularly, the dispersion of both R-HRS and R-LRS is much worsened at low current compliance, which reduces the worst-case read window establishing a trade-off between device reliability and power consumption.

引用

页码：76 / 79

页数：4

共 50 条

[31] A Study of the Variability in Contact Resistive Random Access Memory by Stochastic Vacancy Model [J].

Yun-Feng Kao ;

Wei Cheng Zhuang ;

Chrong-Jung Lin ;

Ya-Chin King .

Nanoscale Research Letters, 2018, 13

[32] Resistive switching modification by ultraviolet illumination in amorphous SrO-based resistive random access memory [J].

Tan, Tingting ;

Du, Yihang ;

Sun, Yaling ;

Zhang, Hua ;

Cao, Ai ;

Zha, Gangqiang .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2019, 30 (14) :13445-13453

[33] Anomalous random telegraph noise and temporary phenomena in resistive random access memory [J].

Puglisi, Francesco Maria ;

Larcher, Luca ;

Padovani, Andrea ;

Pavan, Paolo .

SOLID-STATE ELECTRONICS, 2016, 125 :204-213

[34] Resistive random access memory and its applications in storage and nonvolatile logic [J].

Dongbin Zhu ;

Yi Li ;

Wensheng Shen ;

Zheng Zhou ;

Lifeng Liu ;

Xing Zhang .

Journal of Semiconductors, 2017, (07) :22-34

[35] Performance Improvement by Stack Structure in Flexible Resistive Random Access Memory [J].

Fang, Run-Chen ;

Yang, Wen ;

Sun, Qing-Qing ;

Zhou, Peng ;

Wang, Peng-Fei ;

Zhang, David Wei .

2012 IEEE 11TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT-2012), 2012, :227-229

[36] Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes [J].

Tsai, Cheng-Lin ;

Xiong, Feng ;

Pop, Eric ;

Shim, Moonsub .

ACS NANO, 2013, 7 (06) :5360-5366

[37] Multilevel Cell Storage and Resistance Variability in Resistive Random Access Memory [J].

Prakash, Amit ;

Hwang, Hyunsang .

PHYSICAL SCIENCES REVIEWS, 2016, 1 (06)

[38] Simulation study of dimensional effect on bipolar resistive random access memory [J].

Liu Kai ;

Zhang Kailiang ;

Wang Fang ;

Zhao Jinshi ;

Wei Jun .

INTERNATIONAL JOURNAL OF NANOTECHNOLOGY, 2014, 11 (1-4) :97-105

[39] Joule heating effect in nonpolar and bipolar resistive random access memory [J].

Uenuma, Mutsunori ;

Ishikawa, Yasuaki ;

Uraoka, Yukiharu .

APPLIED PHYSICS LETTERS, 2015, 107 (07)

[40] Utilizing the Variability of Resistive Random Access Memory to Implement Reconfigurable Physical Unclonable Functions [J].

Chen, An .

IEEE ELECTRON DEVICE LETTERS, 2015, 36 (02) :138-140

← 1 2 3 4 5 →