Electrical and thermoelectrical properties of Bi2Se3 grown by metal organic chemical vapour deposition technique

被引：56

作者：

Al Bayaz, A ^{[1
]}

Giani, A ^{[1
]}

Foucaran, A ^{[1
]}

Pascal-Delannoy, E ^{[1
]}

Boyer, A ^{[1
]}

机构：

[1] Univ Montpellier 2, Ctr Elect & Microoptoelect, CNRS, UMR 5507, F-34095 Montpellier 05, France

来源：

THIN SOLID FILMS | 2003年 / 441卷 / 1-2期

关键词：

chemical vapour deposition; bismuth; selenides; semiconductors;

D O I：

10.1016/S0040-6090(03)00675-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Se3 thin films were deposited by metal organic chemical vapour deposition using trimethylbismuth (TMBi) and diethylselenium (DESe) as metal organic sources. Structural properties, electric and thermoelectric results are studied as functions of VI/V ratio (VI/V ratio = DESe partial pressure/TMBi partial pressure). These films always displayed n-type conduction for a VI/V ratio between 14 and 35. The Seebeck coefficient and the carrier concentration vary slightly with the VI/V ratio: - 108 to -120 muV/K and 2 X 10(19)-4 X 10(19)/cm(3), respectively. In contrast, the mobility and the resistivity highly depend on the VI/V ratio. Their values vary from 25 to 140 CM2/V s and 18.2 to 98.5 muOhmm, respectively. These studies have allowed us to find the optimal range for the VI/V ratio at growth temperature of 480 degreesC. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：1 / 5

页数：5

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