Solution-processed ZnO/MoS2 quantum dots electron extraction layer for high performance inverted organic photovoltaics

被引：13
|
作者：
Xie, Junyang [1 ]
Wang, Xiaojun [1 ]
Wang, Shuanglong [1 ]
Ling, Zhitian [1 ]
Lian, Hong [1 ]
Liu, Na [1 ]
Liao, Yingjie [2 ]
Yang, Xuyong [1 ]
Qu, Wenshan [3 ]
Peng, Yan [1 ]
Lan, Weixia [1 ]
Wei, Bin [1 ]
机构：
[1] Shanghai Univ, Sch Mechatron Engn & Automat, Shanghai 200072, Peoples R China
[2] Shanghai Univ, Key Lab Adv Display & Syst Applicat, Minist Educ, Shanghai 200072, Peoples R China
[3] Shanxi Datong Univ, Shanxi Prov Key Lab Microstruct Funct Mat, Inst Solid State Phys, Datong 037009, Peoples R China
来源：
ORGANIC ELECTRONICS | 2019年 / 75卷
基金：
美国国家科学基金会;
关键词：
Organic photovoltaics; Electron extraction layer; ZnO; MoS2 quantum dots; POLYMER SOLAR-CELLS; HOLE TRANSPORT LAYER; INTERFACIAL LAYER; CHARGE-TRANSPORT; WORK-FUNCTION; ZNO; EFFICIENT; NANOPARTICLES; DEVICES; HYBRID;
D O I：
10.1016/j.orgel.2019.105381
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The electron extraction layer (EEL) plays a pivotal role in realizing high performance organic photovoltaics (OPVs). In this work, we report the effort to develop high-efficiency inverted OPVs with solution-processed ZnO/MoS2 quantum dots (QDs) EEL. The employ of MoS2 QDs helps to suppress the exciton quenching by passivating the ZnO surface defects. It is shown that ZnO/MoS2 EEL enables promoted electron extraction and suppressed charge recombination properties. A blend of poly(3-hexylthiophene-2,5-diyl) (P3HT):[6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) was applied as the active layer. The ZnO/MoS2-based OPVs demonstrate superior photovoltaic performance with a champion power conversion efficiency (PCE) of 3.83%, which is > 17.5% higher than that of the pristine ZnO-based device (similar to 3.26%). It is shown that the use of a blend ZnO/MoS(2)QDs EEL offers an effective approach to obtain high performance optoelectronic devices.
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收藏
页数：6
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