Extreme-ultraviolet emissivity from Xe8+ to Xe12+ by using a detailed line-by-line method

A theoretical model has been developed to calculate the emissivity of low density xenon plasmas (from Xe8+ to Xe12+) by employing a detailed line accounting formalism. A complete set; of atomic data such as transition probabilities for electric (magnetic) dipole and quadruple E1, E2, M1 and M2 and electron impact excitation collision strength, which is accurate to fine-structure level, was calculated using a full configuration interaction formalism and was used to solve the rate equation which determines the population of different evels. Detailed results are given for pure Xe10+ ion, which is essential for extreme-ultraviolet emission at 13.5 inn, and for low density plasmas (the electron density was taken to be 10(12) cm(-3)) at; temperatures of 30, 45, 55, 65 and 75 eV. The fraction of different ionization stages was obtained by a completely coupled rate equation from neutral atom to Xe20+ by using a. detailed configuration accounting method. T he results show that the emissivity of the dipole forbidden lines of transition array 4s(2)4p(6)4d(7)5s -> 4s(2)4p(6)4d(8) of Xe10+ is very sensitive to the temperature, which should be a useful tool to diagnose the temperature in EBIT plasmas.