Initial Stages of Planar GaAs Nanowire Growth-Monte Carlo Simulation

被引：0
|
作者：
Spirina, A. A. [1 ]
Neizvestny, I. G. [1 ,2 ]
Shwartz, N. L. [1 ,2 ]
机构：
[1] Russian Acad Sci, Siberian Branch, Rzhanov Inst Semicond Phys, Novosibirsk, Russia
[2] Novosibirsk State Tech Univ, Novosibirsk, Russia
来源：
SEMICONDUCTORS | 2019年 / 53卷 / 16期
关键词：
simulation; Monte Carlo; planar nanowire; GaAs;
D O I：
10.1134/S1063782619120297
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The initial stages of planar self-catalyzed GaAs nanowire growth via the vapor-liquid-solid mechanism are considered by a kinetic lattice Monte Carlo model. The shapes of the nanocrystals being formed under a catalyzed droplet are presented for three GaAs substrate orientations (111)A, (111)B, (001). The most stable planar GaAs nanowire growth was observed on GaAs(111)A substrates.
引用
收藏
页码：2125 / 2128
页数：4
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