Recent progress of flexible electronics by 2D transition metal dichalcogenides

被引:91
作者
Zheng, Lu [1 ,2 ,3 ]
Wang, Xuewen [1 ,2 ,3 ]
Jiang, Hanjun [1 ,2 ]
Xu, Manzhang [1 ,2 ,3 ]
Huang, Wei [1 ,2 ,3 ]
Liu, Zheng [4 ]
机构
[1] Northwestern Polytech Univ, Frontiers Sci Ctr Flexible Elect FSCFE, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, Shaanxi Inst Flexible Elect SIFE, Xian 710072, Peoples R China
[3] Northwestern Polytech Univ, Shaanxi Key Lab Flexible Elect KLoFE, Xian 710072, Peoples R China
[4] Nanyang Technol Univ, Sch Mat Sci & Engn, 50 Nanyang Ave, Singapore 639798, Singapore
基金
中国国家自然科学基金;
关键词
two-dimensional materials; flexible electronics; flexible transistors; flexible sensors; FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; MULTILAYER MOS2 TRANSISTORS; HIGH-PERFORMANCE; MECHANICAL-PROPERTIES; ELASTIC PROPERTIES; LARGE-AREA; FEW-LAYER; MONOLAYER MOS2; INFRARED PHOTODETECTION;
D O I
10.1007/s12274-021-3779-z
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Flexible electronics is the research field with interdisciplinary crossing and integration. It shows the promising advantages of novel device configurations, low-cost and low-power consumption due to their flexible and soft characteristics. Atomic layered two-dimensional (2D) materials especially transition metal dichalcogenides, have triggered great interest in ultra-thin 2D flexible electronic devices and optoelectronic devices because of their direct and tunable bandgaps, excellent electrical, optical, mechanical, and thermal properties. This review aims to provide the recent progress in 2D TMDs and their applications in flexible electronics. The fundamental electrical properties and mechanical properties of materials, flexible device configurations, and their performance in transistors, sensors, and photodetectors are thoroughly discussed. At last, some perspectives are given on the open challenges and prospects for 2D TMDs flexible electronic devices and new device opportunities.
引用
收藏
页码:2413 / 2432
页数:20
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