Development of a High Power Density Auxiliary Converter Based on 1700V 225A SiC MOSFET for Trams

被引：0

作者：

Hao, Liu ^{[1
]}

Lin, Fei ^{[1
]}

Yang, Zhongping ^{[1
]}

Cao, Hu ^{[2
]}

Xia, Meng ^{[2
]}

机构：

[1] Beijing Jiaotong Univ, Sch Elect Engn, Beijing, Peoples R China

[2] CCRC Qingdao Sifang Rolling Stock Res Inst Co Ltd, Qingdao 266000, Peoples R China

来源：

2018 INTERNATIONAL POWER ELECTRONICS CONFERENCE (IPEC-NIIGATA 2018 -ECCE ASIA) | 2018年

关键词：

SiC MOSFET; tram; auxiliary converter; loss model; efficiency;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The application of the SiC MOSFET can improve the efficiency and power density of the auxiliary converter for trams. In this paper, the design process is given. According to the system requirements, the topology, the SiC device and its driver are selected. Then the switching frequency of the high frequency DC/DC module and the three-phase inverter module of the system are determined according to the loss simulation model. At last, the SiC auxiliary converter prototype has been developed whose rated power reaches 40kW and the power density reaches 133VA/L, the output of the system meets the requirement.

引用

页码：3484 / 3489

页数：6

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