A Low-Voltage Sense Amplifier for Embedded Flash Memories

被引：16

作者：

Zhang, Hua ^{[1
]}

Lu, Ling ^{[1
]}

机构：

[1] Chinese Armed Police Force, Engn Univ, Dept Informat Engn, Xian 710086, Peoples R China

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2015年 / 62卷 / 03期

关键词：

Current sensing; embedded flash memories; low voltage; sense amplifier; CIRCUIT;

D O I：

10.1109/TCSII.2014.2368259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a novel sense amplifier with an enhanced current sensing method for embedded flash memories, capable of operating at a voltage as low as 1.2 V. A dynamic bit-line clamping circuit and a novel reference voltage generation circuit are also employed to improve the precharge speed and sensing window under low power supply voltage. The sense amplifier was implemented in a flash realized with a 0.13-mu m flash technology. Experimental results show a read access time of 32 ns with a power supply voltage of 1.2 V and slow corner at 125 degrees C.

引用

页码：236 / 240

页数：5

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