Increased electromechanical coupling in w-ScxAl1-xN

被引：181

作者：

Wingqvist, Gunilla ^{[1
]}

Tasnadi, Ferenc ^{[1
]}

Zukauskaite, Agne ^{[1
]}

Birch, Jens ^{[1
]}

Arwin, Hans ^{[1
]}

Hultman, Lars ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58383 Linkoping, Sweden

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 11期

基金：

瑞典研究理事会;

关键词：

PIEZOELECTRIC RESPONSE;

D O I：

10.1063/1.3489939

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

AlN is challenged as the material choice in important thin film electroacoustic devices for modern wireless communication applications. We present the promise of superior electromechanical coupling (k(t)(2)), in w-ScxAl1-xN by studying its dielectric properties. w-ScxAl1-xN (0 <= x <= 0.3) thin films grown by dual reactive magnetron sputtering exhibited low dielectric losses along with minor increased dielectric constant (epsilon). Ellipsometry measurements of the high frequency epsilon showed good agreement with density function perturbation calculations. Our data show that k(t)(2) will improve from 7% to 10% by alloying AlN with up to 20 mol % ScN. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3489939]

引用

页数：3

共 9 条

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