High quality ultra thin CVD HfO2 gate stack with poly-Si gate electrode

被引：148

作者：

Lee, SJ ^{[1
]}

Luan, HF ^{[1
]}

Bai, WP ^{[1
]}

Lee, CH ^{[1
]}

Jeon, TS ^{[1
]}

Senzaki, Y ^{[1
]}

Roberts, D ^{[1
]}

Kwong, DL ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST | 2000年

关键词：

D O I：

10.1109/IEDM.2000.904252

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have developed and demonstrated an in-situ rapid thermal CVD (RTCVD) process for the fabrication of high quality ultra thin CVD HfO2 gate stack that is compatible with conventional self-aligned poly-Si gate technology. These poly-Si gated HfO2 gate stack show excellent interface properties, EOT=10.4 Angstrom, and leakage current Jg=0.23mA/cm(2) @Vg=-1V which is several orders of magnitude lower than RTO SiO2 with poly-Si gate. In addition, the HfO2 gate stack is thermally stable in direct contact with n(+)-poly Si gate under typical dopant activation conditions. These films also show excellent reliability under high-field electrical stress. We have also fabricated and demonstrated NMOSFETs, and studied boron penetration in HfO2 gate stack with p(+)-poly Si gate.

引用

页码：31 / 34

页数：4

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