Comparison of transient state and steady state exciton-exciton annihilation rates based on Forster-type energy transfer

被引：9

作者：

Yonehara, Toshiya ^{[1
]}

Goushi, Kenichi ^{[2
,3
]}

Sawabe, Tomoaki ^{[1
]}

Takasu, Isao ^{[1
]}

Adachi, Chihaya ^{[2
,3
]}

机构：

[1] Toshiba Co Ltd, Corp Res & Dev Ctr, Elect Imaging Lab, Kawasaki, Kanagawa 2128582, Japan

[2] Kyushu Univ, Ctr Organ Photon & Elect Res OPERA, Fukuoka 8190395, Japan

[3] Kyushu Univ, Int Inst Carbon Neutral Energy Res WPI I2CNER, Fukuoka 8190395, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 07期

基金：

日本学术振兴会;

关键词：

LIGHT-EMITTING-DIODES; ACTIVATED DELAYED FLUORESCENCE; HIGH-EFFICIENCY; DEVICES; ELECTROLUMINESCENCE; PHOSPHORESCENCE;

D O I：

10.7567/JJAP.54.071601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigated differences between the transient state and steady state exciton-exciton annihilation rates based on Forster-type energy transfer. The exciton-exciton annihilation rate of an organic semiconductor is usually determined by transient state photoluminescence measurements using a pulsed laser or steady state photoluminescence measurements using a continuous wave laser. However, it is unclear that the respective annihilation rates determined by their rate equations are the same. In calculations with platinum-octaethylporphyrin (PtOEP) parameters, Monte Carlo simulations gave two different annihilation rates for the transient state and the steady state. The analytical models based on Forster-type energy transfer also showed the same result. These results indicate that the exciton-exciton annihilation rates in transient state and steady state are distinguished. (C) 2015 The Japan Society of Applied Physics

引用

页数：4

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