The structure and photoluminescence properties of SiC films doped with Al

被引：10
作者：
Sha, ZD [1 ]
Wu, XM
Zhuge, LJ
机构：
[1] Suzhou Univ, Dept Phys, Suzhou 215006, Peoples R China
[2] Suzhou Univ, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China
[3] Suzhou Univ, Anal & Testing Ctr, Suzhou 215006, Peoples R China
来源：
PHYSICS LETTERS A | 2005年 / 346卷 / 1-3期
基金：
中国国家自然科学基金;
关键词：
SiC films doped with Al; structure; annealing temperature; photoluminescence;
D O I：
10.1016/j.physleta.2005.07.048
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
SiC films doped with Al were prepared by the RF-magnetron sputtering technique on p-Si substrates with a composite target of a single crystalline SiC containing several Al pieces on the surface. The as-deposited films were annealed in the temperature range of 400-800 degrees C under nitrogen ambient. The thin films have been characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS). The results showed that annealing temperature has an important role in the quality of the samples and leads to the increase in the size of particles. The introduction of Al into films hinders the Si particles from reacting completely with C particles to synthesize SiC and hinders the crystalline formation process. The more Al in the films, the more apparent this phenomenon. When more Al was doped in the films, the Si-C peak is shifted to the lower wave numbers (735 cm(-1)), and more Si particles have formed. Photoluminescence (PL) spectra of the samples were observed in the visible range at room temperature. The origin of the two PL peaks (370 and 412 nm) in sample A and sample B and the double-peak structure in sample C (416 and 440 nm) were discussed. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：186 / 192
页数：7
相关论文
共 25 条
[11]   VISIBLE PHOTOLUMINESCENCE FROM NANOCRYSTALLITE GE EMBEDDED IN A GLASSY SIO2 MATRIX - EVIDENCE IN SUPPORT OF THE QUANTUM-CONFINEMENT MECHANISM [J].
MAEDA, Y .
PHYSICAL REVIEW B, 1995, 51 (03) :1658-1670
[12]   Dependency of reactive magnetron-sputtered SiC film quality on the deposition parameters [J].
Mahmood, A ;
Muhl, S ;
Sansores, LE ;
Andrade, E .
THIN SOLID FILMS, 2000, 373 (1-2) :180-183
[13]  
Naseem S, 1997, J MATER SCI TECHNOL, V13, P499
[14]  
REN DL, 1999, AVIGAT MANUF TECHNOL, V5, P53
[15]   Strong ultraviolet photoluminescence from silicon oxide films prepared by magnetron sputtering [J].
Song, HZ ;
Bao, XM ;
Li, NS ;
Wu, XL .
APPLIED PHYSICS LETTERS, 1998, 72 (03) :356-358
[16]   PRECIPITATION AND RELAXATION IN STRAINED SI1-YCY/SI HETEROSTRUCTURES [J].
STRANE, JW ;
STEIN, HJ ;
LEE, SR ;
PICRAUX, ST ;
WATANABE, JK ;
MAYER, JW .
JOURNAL OF APPLIED PHYSICS, 1994, 76 (06) :3656-3668
[17]   Blue emission from silicon-based β-SiC films [J].
Tan, C ;
Wu, XL ;
Deng, SS ;
Huang, GS ;
Liu, XN ;
Bao, XM .
PHYSICS LETTERS A, 2003, 310 (2-3) :236-240
[18]  
WANG Q, 2003, MICRONANOELECTRON TE, V2, P17
[19]   Growth of crystalline SiC film free of cavities by heating PS/silica sol-gel coatings on Si (111) substrate [J].
Wang, YX ;
He, HP ;
Cao, Y ;
Tang, HG .
MATERIALS LETTERS, 2003, 57 (5-6) :1179-1183
[20]   Optical emission from excess Si defect centers in Si nanostructures [J].
Wu, XL ;
Xiong, SJ ;
Siu, GG ;
Huang, GS ;
Mei, YF ;
Zhang, ZY ;
Deng, SS ;
Tan, C .
PHYSICAL REVIEW LETTERS, 2003, 91 (15) :157402-157402
123