Strain Engineering of Plasma Dispersion Effect for SiGe Optical Modulators

被引：40

作者：

Takenaka, Mitsuru ^{[1
,2
]}

Takagi, Shinichi ^{[1
]}

机构：

[1] Univ Tokyo, Dept Elect Engn & Informat Syst, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy, PRESTO, Kawaguchi, Saitama 3320012, Japan

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 01期

关键词：

High-k dielectric; metal-oxide-semiconductor; optical modulator; Si photonics; SiGe quantum well; strain engineering; CARRIER-DEPLETION; BAND-STRUCTURE; SILICON; MOBILITY; GAP;

D O I：

10.1109/JQE.2011.2176104

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The plasma dispersion effect and free-carrier absorption in strained SiGe are analyzed using the six-band k . p method and the Drude model. Since the hole conductivity mass of SiGe is decreased by applying compressive strain, enhancement of the plasma dispersion effect, and free-carrier absorption in strained SiGe is expected. We predict that Si0.5Ge0.5 coherently grown on Si will exhibit three times higher plasma dispersion and four times higher free-carrier absorption than Si. The modulation characteristics of SiGe quantum well metal-oxide-semiconductor (MOS) optical modulators are also analyzed by technology computer-aided design simulation and finite-difference optical mode analysis. An extremely small V pi L of 0.033 V-cm is predicted in the case of a compressively strained Si0.5Ge0.5 quantum well in conjunction with a high-k gate dielectric MOS structure. The enhancement of free-carrier absorption in the SiGe high-k MOS modulator also makes in-line intensity modulation feasible and an intensity modulation efficiency of 9 dB/mm/V is predicted.

引用

页码：8 / 16

页数：9

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