Phonon properties and thermal conductivity from first principles, lattice dynamics, and the Boltzmann transport equation

被引:186
作者
McGaughey, Alan J. H. [1 ]
Jain, Ankit [1 ]
Kim, Hyun-Young [1 ]
Fu, Bo [1 ,2 ]
机构
[1] Carnegie Mellon Univ, Dept Mech Engn, Pittsburgh, PA 15213 USA
[2] Xi An Jiao Tong Univ, Sch Energy & Power Engn, MOE Key Lab Thermofluid Sci & Engn, Xian 710049, Shaanxi, Peoples R China
基金
美国国家科学基金会;
关键词
GENERALIZED GRADIENT APPROXIMATION; INITIO MOLECULAR-DYNAMICS; TOTAL-ENERGY CALCULATIONS; EXCHANGE-CORRELATION; MODEL; SEMICONDUCTORS; SCATTERING; CRYSTALS; SILICON; SOLVER;
D O I
10.1063/1.5064602
中图分类号
O59 [应用物理学];
学科分类号
摘要
A computational framework for predicting phonon frequencies, group velocities, scattering rates, and the resulting lattice thermal conductivity is described. The underlying theory and implementation suggestions are also provided. By using input from first principles calculations and taking advantage of advances in computational power, this framework has enabled thermal conductivity predictions that agree with experimental measurements for diverse crystalline materials over a wide range of temperatures. Density functional theory and density functional perturbation theory calculations are first used to obtain the harmonic and cubic force constants. The harmonic force constants are the input to harmonic lattice dynamics calculations, which provide the phonon frequencies and eigenvectors. The harmonic properties and the cubic force constants are then used with perturbation theory and/or phenomenological models to determine intrinsic and extrinsic scattering rates. The full set of phonon properties is then used to solve the Boltzmann transport equation for the mode populations and thermal conductivity. The extension of the framework to include higher-order processes, capture finite temperature effects, and model alloys is described. A case study on silicon is presented that provides benchmarking and convergence data. Available packages that implement the framework are compared. Published under license by AIP Publishing.
引用
收藏
页数:19
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