Investigation the three dimensional bound states in quantum dot nanowire systems

被引:5
作者
Amanat, Bentolhoda [1 ]
Vahdani, Mohammad Reza Kazerani [2 ]
机构
[1] Payame Noor Univ, Dept Phys, Tehran, Iran
[2] Malek Ashtar Univ Technol, Fac Naval Aviat, Tehran, Iran
关键词
Quantum dot nanowire; Diameter modulated nanowire; Level anti-crossing; SINGLE NANOWIRE; ZNO NANOWIRES; CORE; HETEROSTRUCTURES; MECHANICS; GROWTH;
D O I
10.1016/j.ssc.2022.114670
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
Electronic confined states of a cylindrical InP quantum dot embedded in infinite GaP nanowire is studied theoretically. To this end the Schrodinger equation is solved numerically in the effective mass approximation. The subband separation between the GaP nanowire and InP/GaP core-shell nanowire is utilized to predict the possible existence of the three dimensionally confined states of the system. Using this, the nanowire critical radius is calculated for each channel of angular momentum, the frontier of type I-Type II transition in the InP/GaP quantum dot nanowire system. It is shown that the lower limit of the continuum energy depends on the angular momentum and increases by it, causing discrete bound states of higher angular momentum to lie in the continuum of the lower ones. Surviving the energy states in the presence of external magnetic field reveals stronger confinement for electrons in states with negative angular momentum quantum numbers.
引用
收藏
页数:7
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共 53 条
  • [1] Ahn MJ, 2020, IEEE SILICON NANOELE, P55, DOI [10.1109/SNW50361.2020.9131416, 10.1109/snw50361.2020.9131416]
  • [2] High-Gain Silicon-Based InGaN/GaN Dot-in-Nanowire Array Photodetector
    Aiello, Anthony
    Hoque, A. K. M. Hasibul
    Baten, Md Zunaid
    Bhattacharya, Pallab
    [J]. ACS PHOTONICS, 2019, 6 (05) : 1289 - 1294
  • [3] Temperature dependence of optical properties of InAs/InP quantum rod-nanowires grown on Si substrate
    Alouane, Mohamed Helmi Hadj
    Nasr, Olfa
    Khmissi, Hammadi
    Ilahi, Bouraoui
    Patriarche, Gilles
    Ahmad, Mohamad M.
    Gendry, Michel
    Bru-Chevallier, Catherine
    Chauvin, Nicolas
    [J]. JOURNAL OF LUMINESCENCE, 2021, 231
  • [4] Three dimensional confined states in core-shell diameter modulated nanowires
    Amanat, Bentolhoda
    Vahdani, Mohammad Reza Kazerani
    [J]. PHYSICA B-CONDENSED MATTER, 2021, 611
  • [5] SiGe nanowires: Structural stability, quantum confinement, and electronic properties
    Amato, Michele
    Palummo, Maurizia
    Ossicini, Stefano
    [J]. PHYSICAL REVIEW B, 2009, 80 (23):
  • [6] Self-Catalyzed InSb/InAs Quantum Dot Nanowires
    Arif, Omer
    Zannier, Valentina
    Rossi, Francesca
    Ercolani, Daniele
    Beltram, Fabio
    Sorba, Lucia
    [J]. NANOMATERIALS, 2021, 11 (01) : 1 - 13
  • [7] Design of Quantum Dot-Nanowire Single-Photon Sources that are Immune to Thermomechanical Decoherence
    Artioli, Alberto
    Kotal, Saptarshi
    Gregersen, Niels
    Verlot, Pierre
    Gerard, Jean-Michel
    Claudon, Julien
    [J]. PHYSICAL REVIEW LETTERS, 2019, 123 (24)
  • [8] Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates
    Boras, Giorgos
    Yu, Xuezhe
    Fonseka, H. Aruni
    Davis, George
    Velichko, Anton V.
    Gott, James A.
    Zeng, Haotian
    Wu, Shiyao
    Parkinson, Patrick
    Xu, Xiulai
    Mowbray, David
    Sanchez, Ana M.
    Liu, Huiyun
    [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2021, 125 (26) : 14338 - 14347
  • [9] Borgström MT, 2005, NANO LETT, V5, P1439, DOI 10.1021/nl050802y
  • [10] Multiplexed analysis of molecular and elemental ions using nanowire transistor sensors
    Chen, Xi
    Hu, Qitao
    Chen, Si
    Netzer, Nathan L.
    Wang, Zhenqiang
    Zhang, Shi-Li
    Zhang, Zhen
    [J]. SENSORS AND ACTUATORS B-CHEMICAL, 2018, 270 : 89 - 96