Crystalline structure and magnetic properties of Fe2CrSi Heusler alloy films:: New ferromagnetic material for high-performance magnetic random access memory

被引：26

作者：

Yoshimura, S. ^{[1
]}

Asano, H. ^{[2
]}

Nakamura, Y. ^{[2
]}

Yamaji, K. ^{[2
]}

Takeda, Y. ^{[2
]}

Matsui, M. ^{[2
]}

Ishida, S. ^{[3
]}

Nozaki, Y. ^{[1
]}

Matsuyama, K. ^{[1
]}

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8190395, Japan

[2] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Nagoya, Aichi 4648603, Japan

[3] Kagoshima Univ, Grad Sch Sci & Engn, Dept Phys, Kagoshima 8908580, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2008年 / 103卷 / 07期

关键词：

D O I：

10.1063/1.2838984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new Heusler alloy, Fe2CrSi, which has high spin polarization (P), low saturation magnetization (M-s), and a low Curie temperature (T-C), was investigated in order to fabricate high-performance magnetic tunnel junctions (MTJs) with a high tunnel magnetoresistance ratio and with low critical current for the spin-transfer switching method, or a low switching field for the thermally assisted magnetization reversal technique. The main results are as follows: (1) P and the magnetic moment of Fe2CrSi with an L2(1) structure were 0.98 and 1.98 mu(B)/f.u., respectively, according to density of states calculations. (2) Fe2CrSi films show the (100) orientation with a B2 structure on a MgO substrate upon a thermal treatment with optimum temperature and duration. (3) Fe2CrSi films have M-s and T-C values of 385 emu/cm(3) and 630 K, respectively. (4) The (100) oriented epitaxial MTJs are produced with Fe2CrSi films fabricated with the optimized thermal treatment condition. It is found that the Fe2CrSi Heusler alloy films are a suitable ferromagnetic material for high-performance magnetic random access memory. (C) 2008 American Institute of Physics.

引用

页数：3

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