Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x<y∼0.8)

被引：2
作者：
Toropov, A. A. [1 ]
Shevchenko, E. A. [1 ]
Shubina, T. V. [1 ]
Jmerik, V. N. [1 ]
Nechaev, D. V. [1 ]
Pozina, G. [2 ]
Bergman, P. [2 ]
Monemar, B. [2 ,3 ]
Rouvimov, S. [1 ,4 ]
Ivanov, S. V. [1 ]
机构：
[1] Ioffe Inst, Politekhnicheskaya 26, St Petersburg 194021, Russia
[2] Linkoping Univ, Dept Phys Chem & Biol, S-58183 Linkoping, Sweden
[3] Tokyo Univ Agr & Technol, Koganei, Tokyo 1848588, Japan
[4] Univ Notre Dame, Notre Dame, IN 46556 USA
来源：
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6 | 2016年 / 13卷 / 5-6期
基金：
俄罗斯科学基金会;
关键词：
AlGaN; quantum wells; excitons; molecular beam epitaxy; RADIATIVE LIFETIMES;
D O I：
10.1002/pssc.201600009
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report on photoluminescence (PL) spectroscopy and electron microscopy studies of an AlGaN quantum well (QW) structure grown by molecular beam epitaxy under metal-rich conditions with substrate rotation. Both techniques reveal unintentional formation within the AlGaN barriers of a quasiperiodic structure of thin Ga-rich layers, whose period is controlled by both the substrate rotation rate and the AlGaN growth rate. These compositional modulations act as 1-3 monolayer thick QWs emitting below 250 nm with an internal quantum efficiency (IQE) as high as similar to 30% at room temperature under weak excitation. Variational calculations of the QW exciton properties indicate that the observed high IQE can result from strong three-dimensional localization of the excitons confined in the narrow QWs. (C) 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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页码：232 / 238
页数：7
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