Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

被引：3

作者：

Yu, Pengfei ^{[1
,2
]}

He, Yihui ^{[1
,2
]}

Wang, Tao ^{[1
,2
]}

Jie, Wanqi ^{[1
,2
]}

机构：

[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China

[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2011年 / 324卷 / 01期

关键词：

Defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; ABSORPTION;

D O I：

10.1016/j.jcrysgro.2011.03.036

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D-0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and mu tau value of 1.18 X 10(-3) cm(2)/V had the best detector performance. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：22 / 25

页数：4