Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

被引：3
作者：
Yu, Pengfei [1 ,2 ]
He, Yihui [1 ,2 ]
Wang, Tao [1 ,2 ]
Jie, Wanqi [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 324卷 / 01期
关键词：
Defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; ABSORPTION;
D O I：
10.1016/j.jcrysgro.2011.03.036
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D-0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and mu tau value of 1.18 X 10(-3) cm(2)/V had the best detector performance. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
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