Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

被引：3
|
作者：
Yu, Pengfei [1 ,2 ]
He, Yihui [1 ,2 ]
Wang, Tao [1 ,2 ]
Jie, Wanqi [1 ,2 ]
机构：
[1] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China
[2] Northwestern Polytech Univ, State Key Lab Solidificat Proc, Xian 710072, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 324卷 / 01期
关键词：
Defects; Bridgman technique; Cadmium compounds; Semiconducting II-VI materials; ABSORPTION;
D O I：
10.1016/j.jcrysgro.2011.03.036
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D-0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and mu tau value of 1.18 X 10(-3) cm(2)/V had the best detector performance. (C) 2011 Elsevier B.V. All rights reserved.
引用
收藏
页码：22 / 25
页数：4
相关论文
共 50 条
  • [1] Detector-grade CdZnTe:In crystals obtained by annealing
    Pengfei Yu
    Wanqi Jie
    Tao Wang
    Journal of Materials Science, 2011, 46 : 3749 - 3752
  • [2] Detector-grade CdZnTe:In crystals obtained by annealing
    Yu, Pengfei
    Jie, Wanqi
    Wang, Tao
    JOURNAL OF MATERIALS SCIENCE, 2011, 46 (11) : 3749 - 3752
  • [3] Characterization of heterogeneities in detector-grade CdZnTe crystals
    Duff, M. C.
    Hunter, D. B.
    Burger, A.
    Groza, M.
    Buliga, V.
    Bradley, J. P.
    Graham, G.
    Dai, Z. R.
    Teslich, N.
    Black, D. R.
    Lanzirotti, A.
    JOURNAL OF MATERIALS RESEARCH, 2009, 24 (04) : 1361 - 1367
  • [4] Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
    Hossain, A.
    Bolotnikov, A. E.
    Camarda, G. S.
    Gul, R.
    Kim, K. H.
    Kisslinger, K.
    Yang, G.
    Zhang, L. H.
    James, R. B.
    JOURNAL OF ELECTRONIC MATERIALS, 2012, 41 (10) : 2908 - 2911
  • [5] Investigation of Structural Defects in CdZnTe Detector-Grade Crystals
    A. Hossain
    A.E. Bolotnikov
    G.S. Camarda
    R. Gul
    K.H. Kim
    K. Kisslinger
    G. Yang
    L.H. Zhang
    R.B. James
    Journal of Electronic Materials, 2012, 41 : 2908 - 2911
  • [6] Characterization of detector-grade CdZnTe crystals grown by traveling heater method (THM.)
    Awadalla, S. A.
    Mackenzie, J.
    Chen, H.
    Redden, B.
    Bindley, G.
    Duff, M. C.
    Burger, A.
    Groza, M.
    Buliga, V.
    Bradley, J. P.
    Dai, Z. R.
    Teslich, N.
    Black, D. R.
    JOURNAL OF CRYSTAL GROWTH, 2010, 312 (04) : 507 - 513
  • [7] Thermal treatment of detector-grade CdZnTe
    Li, Guoqiang
    Zhang, Xiaolu
    Jie, Wanqi
    Hui, Chun
    JOURNAL OF CRYSTAL GROWTH, 2006, 295 (01) : 31 - 35
  • [8] Correlation of dislocations and Te inclusions in detector-grade CdZnTe crystals grown by MVB method
    Xu, Yadong
    He, Yihui
    Xu, Lingyan
    Wang, Tao
    Zha, Gangqiang
    Jie, Wanqi
    HARD X-RAY, GAMMA-RAY, AND NEUTRON DETECTOR PHYSICS XIV, 2012, 8507
  • [9] Study of Detector-Grade CdMnTe:In Crystals Obtained by a Multi-Step Post-Growth Annealing Method
    Yu, Pengfei
    Chen, Yongren
    Li, Wei
    Liu, Wenfei
    Liu, Bin
    Yang, Jie
    Ni, Kun
    Luan, Lijun
    Zheng, Jiahong
    Li, Zhuo
    Bai, Min
    Sun, Guodong
    Li, Hui
    Jie, Wanqi
    CRYSTALS, 2018, 8 (10):
  • [10] Investigation of Te atmosphere annealing on the properties of detector-grade CdMnTe:In single crystals
    Yu, Pengfei
    Luan, Lijun
    Du, Yuanyuan
    Zheng, Jiahong
    Jie, Wanqi
    JOURNAL OF CRYSTAL GROWTH, 2015, 430 : 103 - 107
12345