Al2O3 with metal-nitride nanocrystals as a charge trapping layer of MONOS-type nonvolatile memory devices

被引：10

作者：

Choi, S ^{[1
]}

Kim, SS

Yang, H

Chang, M

Jeon, S

Kim, C

Kim, DY

Hwang, H

机构：

[1] Gwangju Inst Sci & Technol, Dept MSE, Kwangju 500712, South Korea

[2] Samsung Adv Inst Technol, MD Lab, Suwon 440600, South Korea

来源：

MICROELECTRONIC ENGINEERING | 2005年 / 80卷

关键词：

Al2O3; charge trapping characteristics; TiN nanocrystals; nonvolatile memory device; co-sputtering method;

D O I：

10.1016/j.mee.2005.04.078

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The charge trapping characteristics were evaluated for Al2O3 with metal-nitride (TiN) nanocrystals, which was simply prepared by rf magnetron co-sputtering method, as a new charge trapping layer of a metal-oxide-nitride-oxide-silicon-type nonvolatile memory device. Compared with the control sample without TiN nanocrystals, Al2O3 with TiN nanocrystals exhibits larger width of capacitance-voltage hysteresis and higher programming speed. The formation of highly thermally stable TiN nanocrystals embedded in Al2O3 was confirmed by transmission electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction analyses.

引用

页码：264 / 267

页数：4

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