Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO

被引：22

作者：

Ip, K

Baik, KH

Heo, YW

Norton, DP

Pearton, SJ ^{[1
]}

LaRoche, JR

Luo, B

Ren, F

Zavada, JM

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] Univ Florida, Dept Chem Engn, Gainesville, FL 32611 USA

[3] USA, Res Off, Res Triangle Pk, NC 27709 USA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 06期

关键词：

D O I：

10.1116/1.1621651

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

E-beam deposited Ti/Al/Pt/Au contacts on undoped (nsimilar to10(17) cm(-3)) bulk ZnO showed minimum. specific contact resistance, rho(c), of similar to6x10(-4) Omega cm(2) after annealing at 250degreesC. This value was essentially independent of the surface cleaning procedure employed, including sequential solvent cleaning or H-2 plasma exposure. Higher annealing temperatures degraded the rho(c), and Auger electron spectroscopy depth profiling revealed increasing intermixing of the metal layers. The Al outdiffuses to the surface at temperatures as low as 350 degreesC, and the contact metallization is almost completely intermixed by 600 degreesC. (C) 2003 American Vacuum Society.

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页码：2378 / 2381

页数：4

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