On the formation of cleaved mirror facets of GaN-based laser diodes-A comparative study of diamond-tip edge-scribing and laser scribing

被引：9

作者：

Kang, Ji Hye ^{[1
]}

Krueger, Olaf ^{[1
]}

Spengler, Uwe ^{[1
]}

Zeimer, Ute ^{[1
]}

Einfeldt, Sven ^{[1
]}

Kneissl, Michael ^{[1
]}

机构：

[1] Ferdinand Braun Inst Hochstfrequenztech, Gustav Kirchhoff Str 4, D-12489 Berlin, Germany

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2016年 / 34卷 / 04期

关键词：

CONTINUOUS-WAVE OPERATION; LIGHT-EMITTING-DIODES; STRESS; EXTRACTION; SUBSTRATE; ALGAN; FILMS;

D O I：

10.1116/1.4953885

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The formation of cleaved mirror facets of GaN-based laser diodes on c-plane GaN substrates is investigated using either diamond-tip edge-scribing or laser scribing with a skip-and-scribe method. The yield of properly cleaved facets was significantly improved to around 80% when using the laser skip-and-scribe method instead of diamond scribing. In addition, the cleavage planes of laser scribed samples showed fewer terraces than those of diamond scribed samples. The performance of broad area laser diodes with proper facet quality is shown to be independent of the scribing methods studied. (C) 2016 American Vacuum Society.

引用

页数：7

共 29 条

[1] InGaN based green laser diodes on semipolar GaN substrate [J].

Adachi, Masahiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2014, 53 (10)

[2] GaN-Based Light-Emitting Diodes Prepared With Shifted Laser Stealth Dicing [J].

Chang, Shoou-Jinn Chang ;

Chang, L. M. ;

Chen, J. Y. ;

Hsu, C. S. ;

Kuo, D. S. ;

Shen, C. F. ;

Chen, Wei-Shou ;

Ko, T. K. .

JOURNAL OF DISPLAY TECHNOLOGY, 2016, 12 (02) :195-199

[3] Laser Scribing of Sapphire Substrate to Increase Side Light Extraction of GaN-Based Light Emitting Diodes [J].

Chen, K. C. ;

Su, Y. K. ;

Lin, Chun-Liang ;

Hsu, H. C. .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 2011, 29 (13) :1907-1912

[4]

Cooke M, 2006, III-VS REV, V19, P20, DOI 10.1016/S0961-1290(06)71763-X

[5] Strain relaxation in AlGaN under tensile plane stress [J].

Einfeldt, S ;

Kirchner, V ;

Heinke, H ;

Diesselberg, M ;

Figge, S ;

Vogeler, K ;

Hommel, D .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (12) :7029-7036

[6] Microfabrication in free-standing gallium nitride using UV laser micromachining [J].

Gu, E. ;

Howard, H. ;

Conneely, A. ;

O'Connor, G. M. ;

Illy, E. K. ;

Knowles, M. R. H. ;

Edwards, P. R. ;

Martin, R. W. ;

Watson, I. M. ;

Dawson, M. D. .

APPLIED SURFACE SCIENCE, 2006, 252 (13) :4897-4901

[7] Uniformity of the wafer surface temperature during MOVPE growth of GaN-based laser diode structures on GaN and sapphire substrate [J].

Hoffmann, V. ;

Knauer, A. ;

Brunner, C. ;

Einfeldt, S. ;

Weyers, M. ;

Traenkle, G. ;

Haberland, K. ;

Zettler, J. -T. ;

Kneissl, M. .

JOURNAL OF CRYSTAL GROWTH, 2011, 315 (01) :5-9

[8] Impact of laser scribing for efficient device separation of LED components [J].

Illy, EK ;

Knowles, M ;

Gu, E ;

Dawson, MD .

APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :354-361

[9] Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching [J].

Kneissl, M ;

Hofstetter, D ;

Bour, DP ;

Donaldson, R ;

Walker, J ;

Johnson, NM .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :846-849

[10] Room-temperature continuous-wave operation of InGaN multi-quantum-well laser diodes grown on an n-GaN substrate with a backside n-contact [J].

Kuramoto, M ;

Sasaoka, C ;

Hisanaga, Y ;

Kimura, A ;

Yamaguchi, AA ;

Sunakawa, H ;

Kuroda, N ;

Nido, M ;

Usui, A ;

Mizuta, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1999, 38 (2B) :L184-L186

← 1 2 3 →