L1(0) ordered FePt films of (200) or (001) preferred orientations with longitudinal or perpendicular anisotropy have been prepared by DC magnetron sputtering. The fct-FePt film exhibits (200) preferred orientation at the base pressure of 4 x 10(-6) Torr. As the base pressure is decreased (below 9 x 10(-7) Torr), the fct-FePt films exhibit (001) preferred orientation. When the CrRu underlayer thickness decreases from 80 to 30 nm, an improved CrRu (002) and fct-FePt (001) orientation is obtained. Ag doping in FePt film also promotes the growth of fct-FePt (200) orientation and suppresses the growth of fct-FePt (001) orientation. As the thickness of CrRu underlayer decreases to 15 and 8 nm, the orientation of CrRu (002) deteriorates, and FePt-Ag composite films with an improved fct (200) orientation were obtained. It is considered that the changes in relative surface energy due to the introduction of atmospheric components, Ag doping and epitaxial growth energy arising from the lattice misfit between FePt films and CrRu underlayer play an important role in controlling the crystallographic orientation of FePt films on the CrRu underlayer. (c) 2004 Published by Elsevier B.V.
机构:
Texas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USATexas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
Kim, Sungman
Chun, Dongwon
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Univ Calif San Diego, Dept Mat Sci & Engn, San Diego, CA 92093 USA
Korea Inst Sci & Techonol, Biomat Ctr, Seoul 136791, South KoreaTexas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
Chun, Dongwon
Lee, Jungjoong
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Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South KoreaTexas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
Lee, Jungjoong
Jeung, Won Young
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Korea Inst Sci & Technol, Future Convergence Technol Ctr, Seoul 136791, South KoreaTexas A&M Univ, Dept Elect & Comp Engn, College Stn, TX 77843 USA
机构:
Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Jilin Normal Univ, Coll Phys, Siping 136000, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Yu, Y. S.
Li, Hai-Bo
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Jilin Normal Univ, Coll Phys, Siping 136000, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Li, Hai-Bo
Li, W. L.
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Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Li, W. L.
Liu, Mei
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Jilin Normal Univ, Coll Phys, Siping 136000, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
Liu, Mei
Fei, W. D.
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Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R ChinaHarbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China
机构:
Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Hu, J. F.
Chen, J. S.
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Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Natl Univ Singapore, Dept Mat Sci & Engn, Singapore 117576, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Chen, J. S.
Lim, B. C.
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Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore
Lim, B. C.
Zhou, T. J.
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Data Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, SingaporeData Storage Inst, Off Kent Ridge Crescent, NUS, Singapore 117608, Singapore