Effect of annealing on formation and microstructure of ZnTiO3 thin films by DC reactive magnetron co-sputtering

被引：4

作者：

Huang, Yen-Lin ^{[1
]}

Lee, Ying-Chieh ^{[2
]}

Tsai, Du-Cheng ^{[1
]}

Shieu, Fuh-Sheng ^{[1
]}

机构：

[1] Natl Chung Hsing Univ, Dept Mat Sci & Engn, Taichung 402, Taiwan

[2] Natl Pingtung Univ Sci & Technol, Dept Mat Engn, Pingtung 91201, Taiwan

来源：

FUNCTIONAL AND ELECTRONIC MATERIALS | 2011年 / 687卷

关键词：

Zinc titanate; Thin film; Annealing; Microstructure; Reactive sputtering; MICROWAVE DIELECTRIC-PROPERTIES; SYSTEM ZNO-TIO2; TRANSFORMATION; CERAMICS; RUTILE;

D O I：

10.4028/www.scientific.net/MSF.687.610

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of zinc titanate (ZnTiO3) can be produced on Si(100) substrates at room temperature by DC reactive magnetron co-sputtering with Ti, Zn as the target and O-2 as a reactive gas. In this work, the influence of annealing temperature (500-900 degrees C) on microstructure and formation of ZnTiO3 thin films were investigated. The samples are characterized by X-ray diffraction, transmission electron microscopy, scanning electron microscopy, atomic force microscopy, electron spectroscopy for chemical analysis. As-deposited films have an amorphous columnar structure. The crystallization phenomenon was observed with annealing temperature of 500 degrees C. After 600 degrees C 2 h annealing, crystalline phase with ZnTiO3 (hexagonal) and TiO2 (rutile) could be obtained and coexisted. Furthermore, the unit cell size of the ZnTiO3 and TiO2 crystal is a = similar to 5.062 angstrom, c = similar to 13.87 angstrom and a = similar to 4.58 A, c = similar to 2.95 angstrom.

引用

页码：610 / +

页数：2

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